Invention Grant
- Patent Title: Perpendicular magnetic tunnel junction device with skyrmionic enhancement layers for the precessional spin current magnetic layer
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Application No.: US15862788Application Date: 2018-01-05
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Publication No.: US10468588B2Publication Date: 2019-11-05
- Inventor: Manfred Ernst Schabes , Mustafa Michael Pinarbasi , Bartlomiej Adam Kardasz
- Applicant: Spin Memory, Inc.
- Applicant Address: US CA Fremont
- Assignee: Spin Memory, Inc.
- Current Assignee: Spin Memory, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Arnold & Porter Kaye Scholer
- Main IPC: H01L43/08
- IPC: H01L43/08 ; H01L43/12 ; H01L43/10 ; H01L43/02 ; H01L27/22 ; G11C11/16 ; B82Y25/00
Abstract:
A magnetoresistive random-access memory (MRAM) is disclosed. The MRAM device includes a perpendicular magnetic tunnel junction device having a reference layer, a free layer, and a precessional spin current magnetic layer. A skyrmionic enhancement layer is provided adjacent to the precessional spin current magnetic layer. The skyrmionic enhancement layer helps to improve the response of the precessional spin current magnetic layer to applied spin polarized currents.
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