Invention Grant
- Patent Title: High dynamic range storage gate pixel circuitry
-
Application No.: US15476060Application Date: 2017-03-31
-
Publication No.: US10469775B2Publication Date: 2019-11-05
- Inventor: John P. McCarten , Hung Q. Doan , Robert Kaser
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Treyz Law Group, P.C.
- Agent Tianyi He
- Main IPC: H04N5/355
- IPC: H04N5/355 ; H04N5/359 ; H04N5/353 ; H04N5/3745

Abstract:
Image sensors may include image sensor pixels that support high dynamic range (HDR) global shutter function. An image sensor pixel may include a photodiode that is coupled to multiple storage gate nodes via respective charge transfer gates. Each of the multiple storage gate nodes may be configured to store charge corresponding to different exposure periods. The storage gate nodes may be coupled in parallel or in series with the photodiode. Charge from the different exposure times can then be merged to produce a high dynamic range image signal.
Public/Granted literature
- US20180288343A1 HIGH DYNAMIC RANGE STORAGE GATE PIXEL CIRCUITRY Public/Granted day:2018-10-04
Information query