Invention Grant
- Patent Title: Solid-state image sensor and imaging apparatus
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Application No.: US16067316Application Date: 2016-11-30
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Publication No.: US10469783B2Publication Date: 2019-11-05
- Inventor: Yoshimichi Kumagai , Takashi Abe , Kazuyoshi Yamashita , Ryoto Yoshita
- Applicant: SONY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: SONY CORPORATION
- Current Assignee: SONY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Chip Law Group
- Priority: JP2016-009365 20160121
- International Application: PCT/JP2016/085578 WO 20161130
- International Announcement: WO2017/126232 WO 20170727
- Main IPC: H04N5/3745
- IPC: H04N5/3745 ; H01L27/146 ; H04N5/361 ; H04N5/357

Abstract:
To transfer all charges retained in a charge retention region. The photoelectric converter generates a charge corresponding to the exposure amount during a predetermined exposure period. The generated-charge retention portion and the output charge retention portion retain the charge. The generated-charge transfer portion transfers the charge from the photoelectric converter to the generated-charge retention portion to perform the generated-charge transfer after the elapse of the exposure period. The retained-charge transfer portion transfers the charge retained in the generated-charge retention portion to the output charge retention portion to perform the retained-charge transfer. The generated-charge retention gate portion applies a control voltage that is a voltage for controlling potential of the generated-charge retention portion to the generated-charge retention portion during a period of the generated-charge transfer and the retained-charge transfer, applies a bias voltage that is a voltage having a polarity different from the control voltage to the generated-charge retention portion during a period different from the period of the generated-charge transfer and the retained-charge transfer, and applies the bias voltage to the generated-charge retention portion after applying an approximately intermediate voltage between the control voltage and the bias voltage to the generated-charge retention portion at the end of the period of the retained-charge transfer.
Public/Granted literature
- US20190014278A1 SOLID-STATE IMAGE SENSOR AND IMAGING APPARATUS Public/Granted day:2019-01-10
Information query
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