Invention Grant
- Patent Title: Deposition apparatus and method for manufacturing semiconductor device using the same
-
Application No.: US15876829Application Date: 2018-01-22
-
Publication No.: US10475643B2Publication Date: 2019-11-12
- Inventor: Ren-Hua Guo , Ju-Ru Hsieh , Jen-Hao Yang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/02 ; C23C16/455 ; C23C16/458 ; C23C16/46 ; C23C16/50 ; C23C16/52 ; H01L29/66 ; C23C16/44 ; C23C16/509 ; H01L21/8238 ; H01L29/78 ; H01L29/165
Abstract:
A method for manufacturing a semiconductor device includes introducing a gas into a chamber from a showerhead. The chamber has a sidewall surrounding a pedestal. The temperature of the showerhead is increased. The showerhead is thermally connected to the sidewall of the chamber, and a temperature of the sidewall of the chamber is increased by increasing the temperature of the showerhead.
Public/Granted literature
- US20180144932A1 DEPOSITION APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME Public/Granted day:2018-05-24
Information query
IPC分类:
