Invention Grant
- Patent Title: Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
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Application No.: US15925080Application Date: 2018-03-19
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Publication No.: US10475652B2Publication Date: 2019-11-12
- Inventor: Hideto Yamaguchi , Yukitomo Hirochi
- Applicant: HITACHI KOKUSAI ELECTRIC INC.
- Applicant Address: JP Tokyo
- Assignee: Kokusai Electric Corporation
- Current Assignee: Kokusai Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Main IPC: H01L21/268
- IPC: H01L21/268 ; H01L21/324 ; H01L21/78 ; H01L21/67 ; B23K101/40
Abstract:
There is provided a technology includes: heating a heat insulating plate, which is held by a substrate holder configured to hold a substrate, to a processing temperature, at which the substrate is processed, by an electromagnetic wave supplied from a heating device, and measuring a temperature change of the heat insulating plate until the heat insulating plate reaches the processing temperature; heating the substrate, to the processing temperature and measuring a temperature change of the substrate until the substrate reaches the processing temperature; obtaining a correlation between the temperature change of the heat insulating plate and the temperature change of the substrate and heating the substrate by controlling the heating device based on the temperature of the heat insulating plate and the correlation.
Public/Granted literature
- US20180211840A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM Public/Granted day:2018-07-26
Information query
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