Formulations to selectively etch silicon and germanium

Invention Grant

US10475658B2 Formulations to selectively etch silicon and germanium 有权

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Patent Title: Formulations to selectively etch silicon and germanium
Application No.: US15108696

Application Date: 2014-12-29
Publication No.: US10475658B2

Publication Date: 2019-11-12
Inventor: Steven Bilodeau , Emanuel I. Cooper
Applicant: ENTEGRIS, INC.
Applicant Address: US MA Billerica
Assignee: ENTEGRIS, INC.
Current Assignee: ENTEGRIS, INC.
Current Assignee Address: US MA Billerica
Agency: Entegris, Inc.
International Application: PCT/US2014/072571 WO 20141229
International Announcement: WO2015/103146 WO 20150709
Main IPC: H01L21/306
IPC: H01L21/306 ; H01L21/3213

Formulations to selectively etch silicon and germanium

Abstract:

Compositions useful for the selective removal of silicon-containing materials relative to germanium-containing materials, and vice versa, from a microelectronic device having same thereon. The removal compositions include at least one diol and are tunable to achieve the required Si:Ge removal selectivity and etch rates.

Public/Granted literature

US20160343576A1 FORMULATIONS TO SELECTIVELY ETCH SILICON AND GERMANIUM Public/Granted day:2016-11-24

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）