Invention Grant
- Patent Title: Method of processing target object
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Application No.: US16194549Application Date: 2018-11-19
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Publication No.: US10475659B2Publication Date: 2019-11-12
- Inventor: Masahiro Tabata , Yoshihide Kihara
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JP2016-167071 20160829
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01L21/308 ; H01L21/02 ; H01L21/027 ; H01J37/32
Abstract:
A method of processing a target object is provided. In the method, the target object including a first protrusion portion, a second protrusion portion, an etching target layer and a groove portion, the etching target layer having a region belonging to the first protrusion portion and a region belonging to the second protrusion portion, the groove portion being provided on a main surface of the target object, being provided on the etching target layer and being defined by the first protrusion portion and the second protrusion portion, and an inner surface of the groove portion being included in the main surface of the target object is prepared, and a first sequence is repeatedly performed N times (N is an integer equal to or larger than 2). The first sequence includes (a) forming a protection film conformally on the main surface; and (b) etching a bottom portion of the groove portion with plasma of a gas generated after the process a is performed. A mask is formed on the region belonging to the first protrusion portion while the mask is not formed on the region belonging to the second protrusion portion, and a deposition film is formed on the mask.
Public/Granted literature
- US20190088496A1 METHOD OF PROCESSING TARGET OBJECT Public/Granted day:2019-03-21
Information query
IPC分类:
