Invention Grant
- Patent Title: S-contact thermal structure with active circuitry
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Application No.: US15853603Application Date: 2017-12-22
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Publication No.: US10475720B2Publication Date: 2019-11-12
- Inventor: Tero Tapio Ranta , Simon Edward Willard
- Applicant: pSemi Corporation
- Applicant Address: US CA San Diego
- Assignee: pSemi Corporation
- Current Assignee: pSemi Corporation
- Current Assignee Address: US CA San Diego
- Agency: Jaquez Land Greenhaus LLP
- Agent Bruce W. Greenhaus, Esq.
- Main IPC: H01L23/367
- IPC: H01L23/367 ; H01L23/373 ; H01L23/522 ; H01L21/48

Abstract:
An integrated circuit architecture that provides a path having relatively low thermal resistance between one or more electronic devices and one or more thermal structures formed on an insulator layer on a substrate. Independent parallel thermal conduction paths are provided through the insulator layer, such as a buried oxide (“BOX”) layer, to allow heat to flow from the substrate layer to a collector column having a portion in common with a thermal structure disposed upon the BOX layer. In some cases, the substrate is a silicon substrate layer supporting the thermal structure and the collector column and a heat source, such as an electronic device (e.g., power amplifier, transistor, diode, resistor, etc.).
Public/Granted literature
- US20190198414A1 S-Contact Thermal Structure with Active Circuitry Public/Granted day:2019-06-27
Information query
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