Invention Grant
- Patent Title: Semiconductor memory device
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Application No.: US15693433Application Date: 2017-08-31
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Publication No.: US10475809B2Publication Date: 2019-11-12
- Inventor: Takamasa Ito , Toshiaki Fukuzumi
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JP2016-217885 20161108
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L23/522 ; H01L23/528 ; H01L27/1157 ; H01L27/11565

Abstract:
A semiconductor memory device includes a first electrode layer extending in a first direction, a second electrode layer above the first electrode layer and extending in the first direction, a third electrode layer above the first electrode layer and extending in the first direction, an insulating member between the second and third electrode layers and extending in the first direction, first semiconductor members extending in the second direction through the first and second electrodes, second semiconductor members extending in the second direction through the first and third electrode layers, and third semiconductor members extending in the second direction, each having a first portion between the second and third electrode layers and in contact with the insulating member, and a second portion extending through the first electrode layer. In the first direction, an arrangement density of the third semiconductor members is lower than that of the first or second semiconductor member.
Public/Granted literature
- US20180130820A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2018-05-10
Information query
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