- Patent Title: Ferroelectric memory device and method of manufacturing the same
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Application No.: US15820376Application Date: 2017-11-21
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Publication No.: US10475813B2Publication Date: 2019-11-12
- Inventor: Hyangkeun Yoo
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Priority: KR10-2017-0024300 20170223
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L27/1159 ; H01L29/51 ; H01L29/423 ; H01L29/49 ; H01L29/78 ; H01L21/28 ; H01L29/66
Abstract:
In an embodiment, a ferroelectric memory device includes a substrate having a source region and a drain region. The ferroelectric memory device includes a ferroelectric superlattice structure disposed on the substrate and having at least two kinds of different dielectric layers alternately stacked. Further, the ferroelectric memory device includes a gate electrode layer disposed on the superlattice structure.
Public/Granted literature
- US20180240804A1 FERROELECTRIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2018-08-23
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