Invention Grant
- Patent Title: Semiconductor devices
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Application No.: US15947467Application Date: 2018-04-06
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Publication No.: US10482944B2Publication Date: 2019-11-19
- Inventor: Kihun Kwon , Jaeil Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si, Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si, Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2017-0120184 20170919
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C11/406 ; G11C11/4096 ; G11C11/4093 ; G11C11/408

Abstract:
A semiconductor device includes an initial buffer signal generation circuit and a buffer signal generation circuit. The initial buffer signal generation circuit includes an initial buffer circuit which is activated if an initialization operation terminates. The initial buffer signal generation circuit generates an initial buffer signal from an external control signal in response to a first reference voltage signal. The buffer signal generation circuit includes a buffer circuit which is activated in response to the initial buffer signal. The buffer signal generation circuit generates a buffer signal from the external control signal in response to a second reference voltage signal.
Public/Granted literature
- US20190088308A1 SEMICONDUCTOR DEVICES Public/Granted day:2019-03-21
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