Invention Grant
- Patent Title: Semiconductor device having a wiring line with an end portion having rounded side surfaces and manufacturing method thereof
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Application No.: US15255981Application Date: 2016-09-02
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Publication No.: US10483202B2Publication Date: 2019-11-19
- Inventor: Ryota Aburada , Fumiharu Nakajima , Weiting Wang
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L21/768 ; H01L27/11519 ; H01L27/11565 ; H01L21/033 ; H01L21/311

Abstract:
A semiconductor device includes a first to a third wiring-line. The first wiring-line is provided on a first layer in a first direction. The second wiring-line is provided on the first layer in the first direction. A first side surface of the second wiring-line faces the first wiring-line. A second side surface of the second wiring-line is opposite to the first side surface. The third wiring-line is provided on the first layer in the first direction, and faces the second side surface of the second wiring-line. An end portion of the first wiring-line projects further from an end portion of the second wiring-line in the first direction. The end portion of the second wiring-line projects further from an end portion of the third wiring-line in the first direction, and curves toward the third wiring-line. Alternatively, the end portion of the second wiring-line increases in width toward its edge portion.
Public/Granted literature
- US20170243818A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2017-08-24
Information query
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