Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15693370Application Date: 2017-08-31
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Publication No.: US10483236B2Publication Date: 2019-11-19
- Inventor: Masaji Iwamoto
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JP2017-056212 20170322
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/498 ; G11C29/12 ; H01L23/00 ; G11C5/02 ; G11C5/06 ; G11C7/04 ; G11C29/48 ; G11C29/04 ; H01L23/31

Abstract:
A semiconductor device includes a substrate having first and second principal surfaces, and a semiconductor chip disposed on the first principal surface. The substrate includes a first conductor layer disposed on the first principal surface, a second conductor layer disposed on the second principal surface, at least one third conductive layer between the first conductive layer and the second conductive layer, a detection interconnection disposed in either the first conductive layer or the third conductive layer, and first and second pads disposed on the second conductive layer and connected to the detection interconnection. The detection interconnection is not part of signal interconnections that are used during operation of the semiconductor chip and is not electrically connected to any circuit of the semiconductor chip.
Public/Granted literature
- US20180277514A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-09-27
Information query
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