Invention Grant
- Patent Title: Light emitting phototransistor
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Application No.: US15758928Application Date: 2016-09-09
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Publication No.: US10483325B2Publication Date: 2019-11-19
- Inventor: Franky So , Do Young Kim , Hyeonggeun Yu , Bhabendra K. Pradhan
- Applicant: University Of Florida Research Foundation, Incorporated , Nanoholdings, LLC
- Applicant Address: US FL Gainesville US CT Rowayton
- Assignee: University of Florida Research Foundation, Incorporated,Nanoholdings, LLC
- Current Assignee: University of Florida Research Foundation, Incorporated,Nanoholdings, LLC
- Current Assignee Address: US FL Gainesville US CT Rowayton
- Agency: Wolf, Greenfield & Sacks, P.C.
- International Application: PCT/US2016/051039 WO 20160909
- International Announcement: WO2017/044805 WO 20170316
- Main IPC: H01L27/28
- IPC: H01L27/28 ; H01L51/00 ; H01L51/42 ; H01L51/44

Abstract:
A photonic conversion device is provided, comprising a photoactive layer, a dielectric layer, a porous conductor layer, and an electron transport layer in contact with the porous conductor layer. A light emitting device may be in contact with the electron transport layer, forming a conversion device with gain. A method of manufacturing a photonic conversion device may also be provided, comprising forming a photoactive layer, forming a dielectric layer over the photoactive layer, and depositing a conductor layer in contact with the dielectric layer, wherein one or more regions of the dielectric layer are masked during deposition such that the conductor layer includes a plurality of pores that extend through the conductor layer.
Public/Granted literature
- US20190043925A1 LIGHT EMITTING PHOTOTRANSISTOR Public/Granted day:2019-02-07
Information query
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