Invention Grant
- Patent Title: Lateral/vertical semiconductor device with embedded isolator
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Application No.: US15464609Application Date: 2017-03-21
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Publication No.: US10483387B2Publication Date: 2019-11-19
- Inventor: Grigory Simin , Mikhail Gaevski , Michael Shur , Remigijus Gaska
- Applicant: Sensor Electronic Technology, Inc.
- Applicant Address: US SC Columbia
- Assignee: Sensor Electronic Technology, Inc.
- Current Assignee: Sensor Electronic Technology, Inc.
- Current Assignee Address: US SC Columbia
- Agency: LaBatt, LLC
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/417 ; H01L29/06 ; H01L29/20 ; H01L29/205
Abstract:
A lateral/vertical device is provided. The device includes a device structure including a device channel having a lateral portion and a vertical portion. The lateral portion of the device channel can be located adjacent to a first surface of the device structure, and one or more contacts and/or a gate can be formed on the first surface. The device structure also includes a set of insulating layers located in the device structure between the lateral portion of the device channel and a second surface of the device structure opposite the first surface. An opening in the set of insulating layers defines a transition region between the lateral portion of the device channel and a vertical portion of the device channel. A contact to the vertical portion of the device channel can be located on the second surface.
Public/Granted literature
- US20170194475A1 Lateral/Vertical Semiconductor Device with Embedded Isolator Public/Granted day:2017-07-06
Information query
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