Invention Grant
- Patent Title: Method for fabricating semiconductor device
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Application No.: US15849599Application Date: 2017-12-20
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Publication No.: US10483395B2Publication Date: 2019-11-19
- Inventor: Chun-Hao Lin , Hsin-Yu Chen , Shou-Wei Hsieh
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201711183881 20171123
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/02 ; H01L21/027 ; H01L21/762
Abstract:
A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region and a second fin-shaped structure on the second region; forming a first buffer layer on the first fin-shaped structure and the second fin-shaped structure; removing the first buffer layer on the first region; and performing a curing process so that a width of the first fin-shaped structure is different from a width of the second fin-shaped structure.
Public/Granted literature
- US20190157443A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2019-05-23
Information query
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