Electronic device and solid state imaging apparatus
Abstract:
Disclosed herein is an electronic device including a first electrode 21, a second electrode 22, and a photoelectric conversion layer 23 held between the first electrode 21 and the second electrode 22. The first electrode 21 is formed from a transparent conductive material having a work function ranging from 5.2 to 5.9 eV, preferably from 5.5 to 5.9 eV, more preferably 5.8 to 5.9 eV.
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