Invention Grant
- Patent Title: Ceramic circuit substrate and method for producing ceramic circuit substrate
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Application No.: US16097383Application Date: 2017-06-08
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Publication No.: US10485112B2Publication Date: 2019-11-19
- Inventor: Takaomi Kishimoto
- Applicant: TANAKA KIKINZOKU KOGYO K.K.
- Applicant Address: JP Tokyo
- Assignee: TANAKA KIKINZOKU KOGYO K.K.
- Current Assignee: TANAKA KIKINZOKU KOGYO K.K.
- Current Assignee Address: JP Tokyo
- Agency: Orrick, Herrington & Sutcliffe LLP
- Agent Joseph A. Calvaruso; K. Patrick Herman
- Priority: JP2016-116440 20160610
- International Application: PCT/JP2017/021247 WO 20170608
- International Announcement: WO2017/213207 WO 20171214
- Main IPC: H05K3/46
- IPC: H05K3/46 ; C22C5/06 ; H01L23/12 ; H05K1/02 ; H05K1/03 ; H01L23/15 ; H01L23/36 ; H01L23/498 ; B23K1/00 ; B23K35/30 ; C04B37/02 ; H05K1/09 ; B23K35/00 ; B23K35/02 ; B32B15/01 ; C22C5/08 ; C22C9/00 ; H05K3/00 ; H05K3/38 ; B23K103/12 ; B23K101/42 ; B23K35/26 ; B23K35/28 ; B23K35/32

Abstract:
A ceramic circuit substrate according to the present invention includes a ceramic substrate, a copper circuit made of a copper-based material bonded, via a bonding layer, to a surface of the ceramic, and a copper heat sink made of the copper-based material bonded, via a bonding layer, to the other surface of the ceramic. The bonding layers each include a brazing material component including two or more kinds of metals, such as Ag, and an active metal having a predetermined concentration. The bonding layers each include a brazing material layer including the brazing material component, and an active metal compound layer containing the active metal. A ratio of a bonding area of the active metal compound layer in a bonding area of each of the bonding layers is 88% or more.
Public/Granted literature
- US20190150298A1 CERAMIC CIRCUIT SUBSTRATE AND METHOD FOR PRODUCING CERAMIC CIRCUIT SUBSTRATE Public/Granted day:2019-05-16
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