Invention Grant
- Patent Title: RRAM array with current limiting element
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Application No.: US16220421Application Date: 2018-12-14
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Publication No.: US10510411B2Publication Date: 2019-12-17
- Inventor: Chia-Fu Lee , Yu-Der Chih , Hon-Jarn Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00

Abstract:
An integrated chip is disclosed. In some embodiments, the integrated chip includes a plurality of resistive random access memory (RRAM) devices respectively having a first electrode and a second electrode. A bit-line decoder is connected to the first electrode of the plurality of RRAM devices by a plurality of bit-lines. A current limiting element is connected to the second electrode of the plurality of RRAM devices by way of a plurality of access transistors. The current limiting element is configured to concurrently limit currents on the plurality of bit-lines.
Public/Granted literature
- US20190139604A1 RRAM ARRAY WITH CURRENT LIMITING ELEMENT Public/Granted day:2019-05-09
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