Invention Grant
- Patent Title: Method of fabrication of a semiconductor element comprising a highly resistive substrate
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Application No.: US15803447Application Date: 2017-11-03
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Publication No.: US10510531B2Publication Date: 2019-12-17
- Inventor: Oleg Kononchuk , Isabelle Bertrand , Luciana Capello , Marcel Broekaart
- Applicant: Soitec
- Applicant Address: FR Bernin
- Assignee: Soitec
- Current Assignee: Soitec
- Current Assignee Address: FR Bernin
- Agency: TraskBritt
- Priority: FR1660682 20161104
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/268 ; H01L21/322 ; H01L21/324 ; C30B29/06 ; H01L21/762 ; H01L27/12
Abstract:
A method of fabrication of a semiconductor element includes a step of rapid heat treatment in which a substrate comprising a base having a resistivity greater than 1000 Ohm·cm is exposed to a peak temperature sufficient to deteriorate the resistivity of the base. The step of rapid heat treatment is followed by a curing heat treatment in which the substrate is exposed to a curing temperature between 800° C. and 1250° C. and then cooled at a cooldown rate less than 5° C./second when the curing temperature is between 1250° C. and 1150° C., less than 20° C./second when the curing temperature is between 1150° C. and 1100° C., and less than 50° C./second when the curing temperature is between 1100° C. and 800° C.
Public/Granted literature
- US20180130698A1 METHOD OF FABRICATION OF A SEMICONDUCTOR ELEMENT COMPRISING A HIGHLY RESISTIVE SUBSTRATE Public/Granted day:2018-05-10
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