Invention Grant
- Patent Title: Semiconductor devices employing a barrier layer
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Application No.: US14490216Application Date: 2014-09-18
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Publication No.: US10510655B2Publication Date: 2019-12-17
- Inventor: Ying-Hsueh Chang Chien , Yu-Ming Lee , Man-Kit Leung , Chi-Ming Yang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company
- Current Assignee: Taiwan Semiconductor Manufacturing Company
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/522 ; H01L21/768 ; H01L23/532
Abstract:
A semiconductor device includes providing a workpiece including an insulating material layer disposed thereon. The insulating material layer includes a trench formed therein. A barrier layer on the sidewalls of the trench is formed using a surface modification process and a surface treatment process.
Public/Granted literature
- US20150001723A1 Semiconductor Devices Employing a Barrier Layer Public/Granted day:2015-01-01
Information query
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