Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16015201Application Date: 2018-06-22
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Publication No.: US10510832B2Publication Date: 2019-12-17
- Inventor: Tatsuya Naito
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kanagawa
- Priority: JP2017-138462 20170714; JP2017-177941 20170915
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/08 ; H01L27/06 ; H01L29/10 ; H01L29/423 ; H01L29/861 ; H01L29/739 ; H01L29/40 ; H01L21/28

Abstract:
A semiconductor device including: a drift region formed on a semiconductor substrate; a gate trench portion provided on an upper surface of the semiconductor substrate; a first and second mesa portion adjacent to one and the other of the gate trench portions; an accumulation region provided above the drift region in the first mesa portion; a base region provided above the accumulation region; a emitter region provided between the base region and the upper surface of the semiconductor substrate; an intermediate region provided above the drift region in the second mesa portion; a contact region provided above the intermediate region, wherein the gate trench portion has a gate conductive portion; a bottom portion of the gate conductive portion has a first step and second step; and, at least part of the intermediate region is provided between the steps and the bottom portion of the gate trench portion will be provided.
Public/Granted literature
- US20190019861A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-01-17
Information query
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