Invention Grant
- Patent Title: Trench power MOSFET
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Application No.: US16160443Application Date: 2018-10-15
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Publication No.: US10510880B2Publication Date: 2019-12-17
- Inventor: Chun-Wai Ng , Hsueh-Liang Chou , Ruey-Hsin Liu , Po-Chih Su
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/40 ; H01L29/66 ; H01L29/08 ; H01L21/265 ; H01L21/02 ; H01L21/266 ; H01L29/10 ; H01L29/423 ; H01L29/49 ; H01L29/417
Abstract:
A device includes a semiconductor region of a first conductivity type, a trench extending into the semiconductor region, and a conductive field plate in the trench. A first dielectric layer separates a bottom and sidewalls of the field plate from the semiconductor region. A main gate is disposed in the trench and overlapping the field plate. A second dielectric layer is disposed between and separating the main gate and the field plate from each other. A Doped Drain (DD) region of the first conductivity type is under the second dielectric layer, wherein an edge portion of the main gate overlaps the DD region. A body region includes a first portion at a same level as a portion of the main gate, and a second portion at a same level as, and contacting, the DD region, wherein the body region is of a second conductivity type opposite the first conductivity type.
Public/Granted literature
- US20190051745A1 Trench Power MOSFET Public/Granted day:2019-02-14
Information query
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