Invention Grant
- Patent Title: Thin film transistor and manufacturing method therefor
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Application No.: US15459699Application Date: 2017-03-15
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Publication No.: US10510898B2Publication Date: 2019-12-17
- Inventor: Jin-Seong Park , Kyungchul Ok , Hyunjun Jeong
- Applicant: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- Applicant Address: KR Seoul
- Assignee: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- Current Assignee: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- Current Assignee Address: KR Seoul
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2014-0122957 20140916
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/786
Abstract:
A thin film transistor is provided. The thin film transistor includes a substrate, an active pattern disposed on the substrate and including a nitride, a protective pattern disposed on the active pattern and including a non-nitride, a gate electrode overlapping with the active pattern, and a gate insulating layer between the gate electrode and the active pattern.
Public/Granted literature
- US20170186877A1 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR Public/Granted day:2017-06-29
Information query
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