Invention Grant
- Patent Title: Memory device for generating word line signals having varying pulse widths
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Application No.: US16397547Application Date: 2019-04-29
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Publication No.: US10515677B2Publication Date: 2019-12-24
- Inventor: Hyunsung Hong
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: Jones Day
- Main IPC: G11C8/08
- IPC: G11C8/08 ; G11C8/10 ; G11C8/18 ; G11C7/06 ; G11C7/22 ; H03K5/133 ; G11C7/08 ; G11C7/18
Abstract:
A memory device includes a plurality of memory cells, a plurality of word lines, and a word line driver. The word lines are respectively coupled to the memory cells. The word line driver is configured to respectively drive the word lines with word line signals that have varying pulse widths.
Public/Granted literature
- US20190252014A1 Memory Device For Generating Word Line Signals Having Varying Pulse Widths Public/Granted day:2019-08-15
Information query
