Invention Grant
- Patent Title: Oxide sintered body and sputtering target, and method for producing same
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Application No.: US14894718Application Date: 2014-11-28
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Publication No.: US10515787B2Publication Date: 2019-12-24
- Inventor: Yuki Tao , Kenta Hirose , Norihiro Jiko , Mototaka Ochi
- Applicant: KOBELCO RESEARCH INSTITUTE, INC. , KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.)
- Applicant Address: JP Kobe-shi JP Kobe-shi
- Assignee: KOBELCO RESEARCH INSTITUTE, INC.,KOBE STEEL, LTD.
- Current Assignee: KOBELCO RESEARCH INSTITUTE, INC.,KOBE STEEL, LTD.
- Current Assignee Address: JP Kobe-shi JP Kobe-shi
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2013-247763 20131129
- International Application: PCT/JP2014/081642 WO 20141128
- International Announcement: WO2015/080271 WO 20150604
- Main IPC: H01J37/34
- IPC: H01J37/34 ; C23C14/08 ; C23C14/34 ; C04B37/02 ; C04B35/645 ; C04B35/01 ; C04B35/453 ; C04B35/457

Abstract:
An oxide sintered body is obtained by sintering indium oxide, gallium oxide and tin oxide. The oxide sintered body has a relative density of 90% or more and an average grain size of 10 μm or less. In the oxide sintered body, the relations 30 atomic %≤[In]≤50 atomic %, 20 atomic %≤[Ga]≤30 atomic % and 25 atomic %≤[Sn]≤45 atomic % are satisfied. [In], [Ga] and [Sn] are ratios of contents (atomic %) of indium gallium and tin, respectively, to all metal elements contained in the oxide sintered body. The oxide sintered body has an InGaO3 phase which satisfies the relation [InGaO3]≥0.05.
Public/Granted literature
- US20160111264A1 OXIDE SINTERED BODY AND SPUTTERING TARGET, AND METHOD FOR PRODUCING SAME Public/Granted day:2016-04-21
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