Invention Grant
- Patent Title: Underfill control structures and method
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Application No.: US15837452Application Date: 2017-12-11
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Publication No.: US10515865B2Publication Date: 2019-12-24
- Inventor: Ying-Ju Chen , An-Jhih Su , Hsien-Wei Chen , Der-Chyang Yeh , Chi-Hsi Wu , Chen-Hua Yu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L21/48 ; H01L21/56 ; H01L23/522 ; H01L23/00 ; H01L23/538 ; H01L23/498
Abstract:
A semiconductor device and method of reducing the risk of underbump metallization poisoning from the application of underfill material is provided. In an embodiment a spacer is located between a first underbump metallization and a second underbump metallization. When an underfill material is dispensed between the first underbump metallization and the second underbump metallization, the spacer prevents the underfill material from creeping towards the second underbump metallization. In another embodiment a passivation layer is used to inhibit the flow of underfill material as the underfill material is being dispensed.
Public/Granted literature
- US20180102299A1 Underfill Control Structures and Method Public/Granted day:2018-04-12
Information query
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