Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US15934310Application Date: 2018-03-23
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Publication No.: US10515877B2Publication Date: 2019-12-24
- Inventor: Yukihiro Sato , Toshinori Kiyohara
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2017-087869 20170427
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/31 ; H01L23/00

Abstract:
A performance of a semiconductor device is improved. The semiconductor device according to one embodiment includes a wire bonded to one bonding surface at a plurality of parts in an opening formed in an insulating film of a semiconductor chip. The semiconductor device includes also a sealer that seals the semiconductor chip and the wire so that the sealer is in contact with the bonding surface. The bonding surface includes a first region to which a bonding portion of the wire is bonded, a second region to which another bonding portion of the wire is bonded, and a third region between the first region and the second region. A width of the third region is smaller than a width of the first region and a width of the second region.
Public/Granted literature
- US20180315684A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2018-11-01
Information query
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