Invention Grant
- Patent Title: FinFETs and methods of forming FinFETs
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Application No.: US16051332Application Date: 2018-07-31
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Publication No.: US10515958B2Publication Date: 2019-12-24
- Inventor: Tung-Wen Cheng , Chih-Shan Chen , Wei-Yang Lo
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/306 ; H01L21/8234 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L29/167 ; H01L29/66 ; H01L29/78

Abstract:
An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a first portion of the isolation region being between the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a gate seal spacer on sidewalls of the gate structure, a first portion of the gate seal spacer being on the first portion of the isolation region between the first fin and the second fin, and a source/drain region on the first fin and the second fin adjacent the gate structure.
Public/Granted literature
- US20180350809A1 FinFETs and Methods of Forming FinFETs Public/Granted day:2018-12-06
Information query
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