Invention Grant
- Patent Title: Semiconductor device and a method for fabricating the same
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Application No.: US16049378Application Date: 2018-07-30
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Publication No.: US10515964B2Publication Date: 2019-12-24
- Inventor: Shun-Jang Liao , Chia-Chun Liao , Shu-Hui Wang , Shih-Hsun Chang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L29/49 ; H01L27/088 ; H01L21/28 ; H01L21/8238 ; H01L21/8234 ; H01L21/768
Abstract:
A semiconductor device includes first-type-channel field effect transistors (FETs) including a first first-type-channel FET including a first gate structure and a second first-type-channel FET including a second gate structure. The first first-type-channel FET has a smaller threshold voltage than the second first-type-channel FET. The first gate structure includes a first work function adjustment material (WFM) layer and the second gate structure includes a second WFM layer. At least one of thickness and material of the first and second WFM layers is different from each other.
Public/Granted literature
- US10825813B2 Semiconductor device and a method for fabricating the same Public/Granted day:2020-11-03
Information query
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