Invention Grant
- Patent Title: Fabrication of semiconductor device
-
Application No.: US15804887Application Date: 2017-11-06
-
Publication No.: US10516048B2Publication Date: 2019-12-24
- Inventor: I-Chih Chen , Ying-Lang Wang , Chih-Mu Huang , Ying-Hao Chen , Wen-Chang Kuo , Jung-Chi Jeng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/167 ; H01L29/08 ; H01L29/66 ; H01L29/165
Abstract:
A method of fabricating a semiconductor device includes following steps. A trench is formed in a substrate. A barrier layer and an epitaxy layer are formed in sequence in the trench. The barrier layer has a first dopant. A source/drain recess cavity is formed by etching at least the epitaxial layer. A source/drain region is formed in the source/drain recess cavity. The source/drain region has a second dopant.
Public/Granted literature
- US20180061987A1 FABRICATION OF SEMICONDUCTOR DEVICE Public/Granted day:2018-03-01
Information query
IPC分类:
