The present disclosure provides a quantum dot electroluminescent device, which includes: a substrate; an anode disposed on the substrate; a hole transmission layer disposed on the anode; a quantum dot luminescent layer disposed on the hole transmission layer; an electron transmission layer disposed on the quantum dot luminescent layer; and a cathode disposed on the electron transmission layer, wherein the hole transmission layer is a P-type doped hole transmission layer and/or the electron transmission layer is a N-type doped electron transmission layer. The present disclosure further provides a method of manufacturing the quantum dot electroluminescent device. The present disclosure causes degrees of curvature of interfacial energy bands to be different by forming a gradient doping effect in a multi-layer hole transmission layer, so as to form a gradient energy level, that is, the HOMO energy level deepens in order from the anode to the quantum dot luminescent layer, thereby reducing the energy barrier of the holes being injected from the anode to the quantum dot luminescent layer to improve the luminescent efficiency of the device.