Invention Grant
- Patent Title: Long short-term memory cells with saturating gating functions
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Application No.: US14997422Application Date: 2016-01-15
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Publication No.: US10521715B1Publication Date: 2019-12-31
- Inventor: Sergey Ioffe , Raymond Wensley Smith
- Applicant: Google LLC
- Applicant Address: US CA Mountain View
- Assignee: Google LLC
- Current Assignee: Google LLC
- Current Assignee Address: US CA Mountain View
- Agency: Fish & Richardson P.C.
- Main IPC: H01L29/08
- IPC: H01L29/08 ; G06N3/04 ; G06N3/08

Abstract:
Methods, systems, and apparatus, including computer programs encoded on computer storage media, for implementing long-short term memory cells with saturating gating functions. One of the systems includes a first Long Short-Term Memory (LSTM) cell, wherein the first LSTM cell is configured to, for each of the plurality of time steps, generate a new cell state and a new cell output by applying a plurality of gates to a current cell input, a current cell state, and a current cell output, each of the plurality of gates being configured to, for each of the plurality of time steps: receive a gate input vector, generate a respective intermediate gate output vector from the gate input, and apply a respective gating function to each component of the respective intermediate gate output vector, wherein the respective gating function for at least one of the plurality of gates is a saturating gating function.
Information query
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