Invention Grant
- Patent Title: Circuitry and methods for programming resistive random access memory devices
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Application No.: US16037417Application Date: 2018-07-17
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Publication No.: US10522224B2Publication Date: 2019-12-31
- Inventor: John L. McCollum
- Applicant: Microsemi SoC Corp.
- Applicant Address: US CA San Jose
- Assignee: Microsemi SoC Corp.
- Current Assignee: Microsemi SoC Corp.
- Current Assignee Address: US CA San Jose
- Agency: Glass and Associates
- Agent Kenneth D'Alessandro; Kenneth Glass
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; H01L27/24 ; H01L45/00 ; G11C5/06
Abstract:
A method for programming a ReRAM cell including a ReRAM device connected in series with an access transistor includes biasing the ReRAM cell with a programming potential that configures the access transistor in a common-source configuration and applying at least one programming voltage pulse to a gate of the access transistor, the programming voltage pulse having a magnitude selected to limit programming current to a preselected value.
Public/Granted literature
- US20190051352A1 CIRCUITRY AND METHODS FOR PROGRAMMING RESISTIVE RANDOM ACCESS MEMORY DEVICES Public/Granted day:2019-02-14
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