According to one embodiment, a semiconductor storage device includes: a NAND string with a first set of memory cells including a first memory cell; and a second set of memory cells including a second memory cell disposed above the first memory cell. The number of memory cells included in the first set is different from that of memory cells included in the second set. During a program verify operation when a data item of a level is written to a memory cell of the first set and a memory cell of the second set, a first verify voltage is applied to the gate of the memory cell of the first set and a second verify voltage different from the first verify voltage is applied to the gate of the memory cell of the second set.