A method includes depositing a target layer over a substrate; reducing a reflection of a light incident upon the target layer by implanting ions into the target layer, resulting in an ion-implanted target layer; coating a photoresist layer over the ion-implanted target layer; exposing the photoresist layer to the light using a photolithography process, wherein the target layer reduces reflection of the light at an interface between the ion-implanted target layer and the photoresist layer during the photolithography process; developing the photoresist layer to form a resist pattern; etching the ion-implanted target layer with the resist pattern as an etch mask; processing the substrate using at least the etched ion-implanted target layer as a process mask; and removing the etched ion-implanted target layer.