Invention Grant
- Patent Title: Gettering layer formation and substrate
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Application No.: US15450605Application Date: 2017-03-06
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Publication No.: US10522367B2Publication Date: 2019-12-31
- Inventor: Xia Li , Bin Yang , Gengming Tao
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: Qualcomm Incorporated
- Current Assignee: Qualcomm Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Seyfarth Shaw LLP
- Main IPC: H01L21/265
- IPC: H01L21/265 ; H01L21/322 ; H01L21/02 ; H01L23/29 ; H01L23/31
Abstract:
An integrated circuit (IC) device may include a substrate having an active device layer. The integrated circuit may also include a first defect layer. The first defect layer may have a first surface facing a backside of the active device layer. The integrated circuit may further include a second defect layer. The second defect layer may face a second surface opposite the first surface of the first defect layer.
Public/Granted literature
- US20180254194A1 GETTERING LAYER FORMATION AND SUBSTRATE Public/Granted day:2018-09-06
Information query
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