Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
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Application No.: US15960233Application Date: 2018-04-23
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Publication No.: US10522418B2Publication Date: 2019-12-31
- Inventor: Wei-Sheng Yun , You-Ru Lin , Shao-Ming Yu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/02 ; H01L25/065 ; H01L21/76 ; H01L21/027 ; B82Y10/00 ; H01L27/06 ; H01L29/78 ; H01L29/423 ; H01L29/775 ; H01L21/8234 ; H01L27/088 ; H01L29/786 ; H01L29/66 ; H01L21/822 ; H01L29/06 ; H01L29/10
Abstract:
A method for manufacturing a semiconductor device is provided. A semiconductor substrate is received. The semiconductor substrate is patterned to form a plurality of protrusions spaced from one another, wherein the protrusion comprises a base section, and a seed section stacked on the base section. A plurality of first insulative structures are formed, covering sidewalls of the base sections and exposing sidewalls of the seed sections. A plurality of spacers are formed, covering the sidewalls of the seed sections. The first insulative structures are partially removed to partially expose the sidewalls of the base sections. The base sections exposed from the first insulative structures are removed. A plurality of second insulative structures are formed under the seed sections.
Public/Granted literature
- US20190131128A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2019-05-02
Information query
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