Invention Grant
- Patent Title: Semiconductor device structure with gate spacer having protruding bottom portion and method for forming the same
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Application No.: US16220261Application Date: 2018-12-14
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Publication No.: US10522422B2Publication Date: 2019-12-31
- Inventor: Yung-Tsun Liu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/465
- IPC: H01L21/465 ; H01L21/8238 ; H01L29/78 ; H01L29/165 ; H01L21/441 ; H01L21/8258 ; H01L27/092 ; H01L29/08 ; H01L29/161 ; H01L29/26 ; H01L29/423 ; H01L29/66 ; H01L21/311 ; H01L29/06
Abstract:
A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a substrate and a gate stack structure formed on the substrate. The semiconductor device structure also includes gate spacers formed on the sidewall of the gate stack structure, and the gate spacers include a top portion and a bottom portion adjoined to the top portion, and the bottom portion slopes to a top surface of the substrate. The semiconductor device structure further includes an epitaxial structure formed adjacent to the gate spacers, and the epitaxial structure is formed below the gate spacers.
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