The present technology relates to an imaging apparatus and a manufacturing method which enables sensitivity of an imaging apparatus using infrared rays to be improved. The imaging apparatus includes: a light-receiving element array in which a plurality of light-receiving elements including a compound semiconductor having light-receiving sensitivity in an infrared range are arrayed; a signal processing circuit that processes a signal from the light-receiving element; an upper electrode formed on a light-receiving surface side of the light-receiving element; and a lower electrode that is paired with the upper electrode, in which the light-receiving element array and the signal processing circuit are joined to each other with a film of a predetermined material, the upper electrode and the signal processing circuit are connected to each other through a through-via-hole penetrating a part of the light-receiving element, and the lower electrode is made as an electrode common to the light-receiving elements arrayed in the light-receiving element array. The present technology can be applied to an infrared sensor.