Invention Grant
- Patent Title: Semiconductor circuit using positive feedback field effect transistor for emulating neuron firing process
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Application No.: US16007120Application Date: 2018-06-13
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Publication No.: US10522665B2Publication Date: 2019-12-31
- Inventor: Byung-Gook Park , Min-Woo Kwon , Sungmin Hwang , Myung-Hyun Baek , Tae-Jin Jang
- Applicant: Seoul National University R&DB FOUNDATION
- Applicant Address: KR
- Assignee: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
- Current Assignee: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
- Current Assignee Address: KR
- Agent Gerald E. Hespos; Michael J. Porco; Matthew T. Hespos
- Priority: KR10-2017-0079213 20170622
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H01L29/739 ; H01L29/08 ; H01L29/10 ; G06N3/10 ; H01L29/423 ; H03K3/012

Abstract:
Semiconductor circuits are provided for emulating neuron firing process using a positive feedback transistor having first and second gate electrodes in the longitudinal direction of a channel region. The first gate electrode is connected to a gate electrode of a first p-channel MOSFET to be an input terminal and the second gate electrode is connected to a drain to be applied with a supply voltage. Thus electrons and holes can accumulate separately in a channel region (i.e., a body) under each of the gate electrodes by applying input signals to the input terminal and drastically reduce the wasted power consumption in the non-fired neurons because the current is turned on and off only at a moment that corresponds to a firing of the neuron. Thus, the semiconductor circuits can be driven by low power and have the same level of endurance as a general MOSFET.
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