Invention Grant
- Patent Title: Manufacturing method of quantum dot, light-emitting material, light-emitting device, and display apparatus
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Application No.: US16053812Application Date: 2018-08-03
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Publication No.: US10522711B2Publication Date: 2019-12-31
- Inventor: Wei-Ta Chen
- Applicant: Chi Mei Corporation
- Applicant Address: TW Tainan
- Assignee: Chi Mei Corporation
- Current Assignee: Chi Mei Corporation
- Current Assignee Address: TW Tainan
- Agency: JCIPRNET
- Priority: TW106126318A 20170804
- Main IPC: H01L33/08
- IPC: H01L33/08 ; H01L33/06 ; H01L33/56 ; C09K11/88 ; B82Y30/00 ; B82Y40/00

Abstract:
A manufacturing method of a quantum dot, a light-emitting material, a light-emitting device, and a display apparatus are provided. The manufacturing method of a quantum dot includes the following steps. A first solution including at least one element selected from the group consisting of an element in Group XII and an element in Group XIII is provided. A second solution including at least one element selected from the group consisting of an element in Group XV and an element in Group XVI is provided. The first solution and the second solution are mixed. A thermal treatment is performed on the mixed solution. A range of the heating rate of the thermal treatment is 2° C./min to 10° C./min.
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