- Patent Title: Photoelectric conversion element and solid-state imaging apparatus
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Application No.: US16317447Application Date: 2017-06-08
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Publication No.: US10522772B2Publication Date: 2019-12-31
- Inventor: Nobuyuki Matsuzawa , Yuta Hasegawa , Yoshiaki Obana , Ichiro Takemura , Tetsuji Yamaguchi , Osamu Enoki
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: Sony Semiconductor Solutions Corporation
- Current Assignee: Sony Semiconductor Solutions Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Sheridan Ross P.C.
- Priority: JP2016-142547 20160720
- International Application: PCT/JP2017/021262 WO 20170608
- International Announcement: WO2018/016215 WO 20180125
- Main IPC: H01L51/42
- IPC: H01L51/42 ; H01L27/30 ; H01L27/146 ; H01L31/10 ; H01L27/28 ; H01L51/00

Abstract:
A photoelectric conversion element according to an embodiment of the present disclosure includes a first electrode and a second electrode opposed to each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material and a second semiconductor material that have mutually different mother skeletons, in which the first organic semiconductor material is fullerene or a fullerene derivative, and the second organic semiconductor material has a deeper HOMO level than the first organic semiconductor material.
Public/Granted literature
- US20190229151A1 PHOTOELECTRIC CONVERSION ELEMENT AND SOLID-STATE IMAGING APPARATUS Public/Granted day:2019-07-25
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