Invention Grant
- Patent Title: Vertical sense devices in vertical trench MOSFET
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Application No.: US15634739Application Date: 2017-06-27
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Publication No.: US10527654B2Publication Date: 2020-01-07
- Inventor: M. Ayman Shibib , Wenjie Zhang
- Applicant: Vishay-Siliconix
- Applicant Address: US CA San Jose
- Assignee: Vishay SIliconix, LLC
- Current Assignee: Vishay SIliconix, LLC
- Current Assignee Address: US CA San Jose
- Main IPC: G01R19/00
- IPC: G01R19/00 ; H01L29/78 ; H01L27/088 ; H01L27/06 ; H01L29/06 ; G01R19/15 ; H01L21/8234 ; H01L21/02 ; H01L21/28 ; H01L21/306 ; H01L21/308 ; H01L21/3213 ; H01L27/02 ; H01L29/417 ; H01L29/423 ; H01L29/66 ; H01L29/40
Abstract:
Vertical sense devices in vertical trench MOSFET. In accordance with an embodiment of the present invention, an electronic circuit includes a vertical trench metal oxide semiconductor field effect transistor configured for switching currents of at least one amp and a current sensing field effect transistor configured to provide an indication of drain to source current of the MOSFET. A current sense ratio of the current sensing FET is at least 15 thousand and may be greater than 29 thousand.
Public/Granted literature
- US20170299639A1 VERTICAL SENSE DEVICES IN VERTICAL TRENCH MOSFET Public/Granted day:2017-10-19
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