Invention Grant
- Patent Title: Layered semiconductor device, and production method therefor
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Application No.: US16070738Application Date: 2016-12-22
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Publication No.: US10529385B2Publication Date: 2020-01-07
- Inventor: Yasutoshi Yamada , Kouji Uemura , Takao Adachi
- Applicant: ULTRAMEMORY INC.
- Applicant Address: JP Tokyo
- Assignee: ULTRAMEMORY INC.
- Current Assignee: ULTRAMEMORY INC.
- Current Assignee Address: JP Tokyo
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: WOPCT/JP2016/051316 20160118
- International Application: PCT/JP2016/088470 WO 20161222
- International Announcement: WO2017/126291 WO 20170727
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C29/04 ; G11C11/407 ; H01L25/065 ; H01L25/07

Abstract:
A layered semiconductor device capable of improving production yield and a method for producing the layered semiconductor device. The layered semiconductor device has, layered therein, a plurality of semiconductor chips, a reserve semiconductor chip which is used as a reserve for the semiconductor chips, and a control chip for controlling the operating states of the plurality of semiconductor chips and the operating state of the reserve semiconductor chip. The semiconductor chips and the reserve semiconductor chip include contactless communication units and operating switches, and are capable of contactlessly communicating with another of the semiconductor chips via the contactless communication units. The control chip controls the operating states of the semiconductor chips by switching the operating switches of the semiconductor chips, and controls the operating state of the reserve semiconductor chip by switching the operating switch of the reserve semiconductor chip.
Public/Granted literature
- US20190043537A1 LAYERED SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD THEREFOR Public/Granted day:2019-02-07
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