Invention Grant
- Patent Title: Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating
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Application No.: US16274521Application Date: 2019-02-13
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Publication No.: US10529424B2Publication Date: 2020-01-07
- Inventor: Yuniarto Widjaja
- Applicant: Zeno Semiconductor, Inc.
- Applicant Address: US CA Sunnyvale
- Assignee: Zeno Semiconductor, Inc.
- Current Assignee: Zeno Semiconductor, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Law Office of Alan W. Cannon
- Main IPC: G11C11/24
- IPC: G11C11/24 ; G11C14/00 ; G11C11/404 ; H01L29/78 ; H01L27/108 ; G11C11/4072 ; G11C13/00 ; H01L45/00 ; H01L27/24 ; G11C11/21 ; G11C11/407
Abstract:
A semiconductor memory cell including a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell, and a non-volatile memory comprising a bipolar resistive change element, and methods of operating.
Public/Granted literature
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