Invention Grant
- Patent Title: Trench gate power MOSFET and manufacturing method thereof
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Application No.: US16043674Application Date: 2018-07-24
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Publication No.: US10529567B2Publication Date: 2020-01-07
- Inventor: Shufan Yan
- Applicant: Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Applicant Address: CN Shanghai
- Assignee: Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Current Assignee: Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Current Assignee Address: CN Shanghai
- Agency: Murtha Cullina LLP
- Priority: CN201710629424 20170728
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L29/423 ; H01L29/06 ; H01L29/10 ; H01L29/49 ; H01L29/66 ; H01L21/265 ; H01L21/266 ; H01L21/28 ; H01L29/78 ; H01L29/08 ; H01L21/027
Abstract:
Trench gate power MOSFET with an on-region. Cells in the on-region include a first epitaxial layer and a channel region. First trenches corresponding to polysilicon gates penetrate through the channel region, and each polysilicon gate is etched to form a groove in the top, the grooves filled with an interlayer film. A source region formed on side faces of the grooves in a self-aligned mode through angled ion implantation. Through the source region of a side structure, the surface of a portion, between the first trenches, of the channel region is directly exposed and formed with a well contact region. A front metal layer is formed on the surfaces of the cells in the on-region and leads out a source. The front metal layer of the source directly makes contact with well contact region and source region to form a connection structure without contact holes.
Public/Granted literature
- US20190035903A1 TRENCH GATE POWER MOSFET AND MANUFACTURING METHOD THEREOF Public/Granted day:2019-01-31
Information query
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