Invention Grant
- Patent Title: Method of plasma etching of silicon-containing organic film using sulfur-based chemistry
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Application No.: US15995173Application Date: 2018-06-01
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Publication No.: US10529589B2Publication Date: 2020-01-07
- Inventor: Erdinc Karakas , Li Wang , Andrew Nolan , Christopher Talone , Shyam Sridhar , Alok Ranjan , Hiroto Ohtake
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Main IPC: H01L21/3213
- IPC: H01L21/3213 ; H01L21/311 ; H01L21/3065 ; H01L21/033 ; H01L21/027
Abstract:
A method of etching is described. The method providing a substrate having a first material composed of silicon-containing organic material and a second material that is different from the first material, forming a chemical mixture by plasma-excitation of a process gas containing SF6 and an optional inert gas, controlling a processing pressure at or above 100 mtorr, and exposing the first material on the substrate to the chemical mixture to selectively etch the first material relative to the second material.
Public/Granted literature
- US20180358233A1 METHOD OF PLASMA ETCHING OF SILICON-CONTAINING ORGANIC FILM USING SULFUR-BASED CHEMISTRY Public/Granted day:2018-12-13
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