Invention Grant
- Patent Title: Semiconductor device assembly with pillar array
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Application No.: US15830839Application Date: 2017-12-04
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Publication No.: US10529592B2Publication Date: 2020-01-07
- Inventor: Owen R. Fay , Akshay N. Singh , Kyle K. Kirby
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Agency: Parsons Behle & Latimer
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L21/66 ; H01L23/48 ; H01L23/498 ; H01L25/065

Abstract:
A semiconductor device assembly and method of forming a semiconductor device assembly that includes a first substrate, a second substrate disposed over the first substrate, at least one interconnect between the substrates, and at least one pillar extending from the bottom surface of the first substrate. The pillar is electrically connected to the interconnect and is located adjacent to a side of the first substrate. The pillar is formed by filling a via through the substrate with a conductive material. The first substrate may include an array of pillars extending from the bottom surface adjacent to a side of the substrate that are formed from a plurality of filled vias. The substrate may include a test pad located on the bottom surface or located on the top surface. The pillars may include a removable coating enabling the pillars to be probed without damaging the inner conductive portion of the pillar.
Public/Granted literature
- US20190172725A1 High Density, Tight Array Copper Pillar Interconnect Method and Package Public/Granted day:2019-06-06
Information query
IPC分类: