Invention Grant
- Patent Title: Substrate processing apparatus and method of manufacturing semiconductor device
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Application No.: US15900283Application Date: 2018-02-20
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Publication No.: US10529607B2Publication Date: 2020-01-07
- Inventor: Takeshi Ito
- Applicant: HITACHI KOKUSAI ELECTRIC INC.
- Applicant Address: JP Tokyo
- Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Main IPC: H01L21/677
- IPC: H01L21/677 ; H01L21/67 ; H01L21/02 ; C23C16/455 ; C23C16/50
Abstract:
A substrate processing apparatus includes an accommodating chamber including a loading shelf configured to load a storage vessel that accommodates a substrate; a transfer mechanism installed in a ceiling part of the accommodating chamber and configured to hold an upper portion of the storage vessel and transfer the storage vessel; and a port configured to load and unload the storage vessel to and from the accommodating chamber.
Public/Granted literature
- US20180174877A1 SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2018-06-21
Information query
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